s11-2109 rev . b , 31-oct-11 1 document number: 67932 p-channel 30 v (d-s) mosfet feature s ? halogen-free according to iec 6124 9-2-21 definition ?trenchfet ? power mosfet ? aec-q10 1 qualified c ?100 % r g and uis tested ? compliant to rohs directive 2002/95/ec not e s a. pulse test; pulse width ? 300 s, duty cycle ? 2 %. b. when mounted on 1" squa re pcb (fr-4 material). c. parametric verification ongoing. product summary v ds (v) - 30 r ds(on) ( ? ) at v gs = - 10 v 0.018 r ds(on) ( ? ) at v gs = - 4.5 v 0.031 i d (a) - 15 configuration s ingle s g d p-channel mosfet so-8 sd sd sd gd 5 6 7 8 to p view 2 3 4 1 order i ng information pa ckag e so-8 lead (pb)-free and halo gen-free % 5 . 4435 absolute maximum ratings (t c = 25 c , unless otherwise noted) pa rameter s ymbol limit unit drain-source voltage v ds - 30 v gate- so urce voltage v gs 20 continuous drain current t c = 25 c i d - 15 a t c = 125 c - 8.7 continuous source curr ent (diode conduction) i s - 6.2 pu lsed drain current a i dm - 60 si ng le pulse avalanche current l = 0.1 mh i as - 25 sing le pulse avalanche energy e as 31 mj maxi mum power dissipation a t c = 25 c p d 6.8 w t c = 125 c 2.3 operating junction and storage temperature range t j , t stg - 55 to + 175 c ther ma l resistance ratings parameter symb ol limit unit junction-to-ambient pcb mount b r thja 85 c/w j unc tion-to-foot (drain) r thjf 22 dt . www.daysemi.jp
s11-2109 rev. b, 31-oct-11 2 document number: 67932 no tes a. pulse test; pulse width ? 300 s, duty cycle ? 2 %. b. guaranteed by design , not subject to production testing. c. independent of operating temperature. stresses bey ond those listed under absolute maximum ratings ma y cause permanent damage to th e device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operatio nal sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended pe riods may affect device reliability. spec ifications (t c = 25 c, unless otherwise noted) p arameter symbol test condi tions min. typ. max. unit stati c drain-source breakdown voltage v ds v gs = 0, i d = - 250 a - 30 - - v gate-source threshold voltage v gs(t h) v ds = v gs , i d = - 25 0 a - 1.5 - 2.0 - 2.5 gate-source leakage i gss v ds = 0 v, v gs = 20 v - - 100 na zero gate voltage drain current i d ss v gs = 0 v v ds = - 30 v - - - 1 a v gs = 0 v v ds = - 30 v, t j = 125 c - - - 50 v gs = 0 v v ds = - 30 v, t j = 175 c - - - 150 on-state drain current a i d(o n) v gs = - 10 v v ds ??? - 5 v - 30 - - a drain-source on-state resistance a r ds (on) v gs = - 10 v i d = - 8 a - 0.013 0.018 ? v gs = - 10 v i d = - 8 a, t j = 125 c - - 0.026 v gs = - 10 v i d = - 8 a, t j = 175 c - - 0.030 v gs = - 4.5 v i d = - 6 a - 0.023 0.031 forward transconductance b g fs v ds = - 15 v, i d = - 8 a - 22 - s dyn amic b input c apacitance c is s v gs = 0 v v ds = - 15 v, f = 1 mhz - 1736 2170 pf output capacitance c oss - 392 490 reverse transfer capacitance c rss - 268 335 total gate charge c q g v gs = - 10 v v ds = - 15 v, i d = - 4.6 a - 38.3 58 nc gate-source charge c q gs -5 .9- gate-drain charge c q gd -9 - gate resistance r g f = 1 mhz 2 - 7 ? turn-on delay time c t d( on) v dd = - 15 v , r l = 15 ? i d ? - 1 a, v ge n = - 10 v, r g = 1 ? - 12.5 19 ns rise time c t r -9 15 turn-off delay time c t d(of f) - 45.3 68 fall time c t f -1 015 s ource-drain diode ratings and characteristics b pulse d current a i sm -- - 60a forward voltage v sd i f = - 8 a, v gs = 0 - - 0.84 - 1.2 v dt . www.daysemi.jp
s11-2109 rev. b, 31-oct-11 3 document number: 67932 typica l characteristics (t a = 2 5 c, unless otherwise noted) output characteristics tr ansconductance capacitance transfer characteristics on-resistance vs. drain current gate charge 0 10 20 30 40 50 0 2 4 6 8 10 i d - drain current (a) v d s -d rain-to- s ource voltage (v) v gs = 10 v thru 5 v v gs = 3 v v gs = 4 v 0 8 16 24 32 40 0 5 10 15 20 25 g f s -t ran s conductance ( s ) i d -d rain current (a) t c = 1 25 c t c = - 55 c t c = 2 5 c 0 500 1000 1500 2000 2500 3000 0 5 10 15 20 25 30 c - capacitance (pf) v d s -d rain-to- s ource voltage (v) c i ss c o ss c rss 0 10 20 30 40 50 0 2 4 6 8 10 i d - drain current (a) v gs - gate- to- s ource voltage (v) t c = - 55 c t c = 125 c t c = 25 c 0.00 0.01 0.02 0.03 0.04 0.05 0 10 20 30 40 50 r d s (o n) -o n-re si s tance () i d - drain current (a) v gs = 4 .5 v v gs = 1 0 v 0 2 4 6 8 10 0 10 20 30 40 50 v gs - gate- to- s ource voltage (v) q g -t otal g ate charge (nc) i d = 4.6 a dt . daysemi.jp
s11-2109 rev. b, 31-oct-11 4 document number: 67932 typica l characteristics (t a = 2 5 c, unless otherwise noted) o n-resistance vs. junction temperature threshold voltage source drain diod e forward voltage drain source breakdown vs . junction temperature safe operating area 0.5 0.8 1.1 1.4 1.7 2.0 - 50 - 25 0 25 50 75 100 125 150 175 r d s (o n) -o n-re si s tance (normalized) t j - junction temperature ( c) i d = 8 a v gs = 4.5 v v gs = 1 0 v -0 .5 -0.2 0.1 0.4 0.7 1.0 - 50 - 25 0 25 50 75 100 125 150 175 v gs (th ) variance (v) t j -t emperature ( c) i d = 250 a i d = 5 ma 0.001 0.01 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s - s ource c urrent (a) v s d - s ource- to-drain voltage (v) t j = 2 5 c t j = 150 c -4 0 -38 -36 -34 -32 -30 - 50 - 25 0 25 50 75 100 125 150 175 v d s -d rain-to- s ource voltage (v) t j - junction temperature ( c) i d = 1 ma v ds - drain-to-source v oltage (v ) * v gs minimum v gs at w hich r ds (on) is specified - drain current (a) i d t c = 25 c single pulse 1 ms 100 s r ds (on) * limited by 10 ms 0.01 0.1 1 10 100 0.01 0.1 1 10 100 bvdss limited i dm limited 100 ms 1 s 10 s, dc dt . daysemi.jp
s11-2109 rev. b, 31-oct-11 5 document number: 67932 the rmal ratings (t a = 25 c, unless otherwise noted) n ormalized thermal transient impedance, junction-to-ambient normalized thermal transient impedance, junction-to-foot note ? the characteristics shown in the two graphs - normalized transient thermal impedance junction-to-ambient (25 c) - normalized transient thermal impedance junction-to-foot (25 c) are given for general guidelines only to enable the user to get a ball park indication of part capabilities. the data are ext racted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. the latter is valid for the part mounted on printed circ uit board - fr4, size 1" x 1" x 0. 062", double sided with 2 oz. copper, 100 % on both sides. the part ca pabilities can widely vary depending on actual application parameters and operating conditions. 10 -3 10 -2 1 10 1000 10 -1 10 -4 100 0.2 0.1 square wave pul s e duration (s) normalized effective tran sient thermal impedance 1 0.1 0.01 t 1 t 2 note s: p dm 1. duty cycle, d = 2. per unit ba s e=r thja = 85 c/w 3. t jm -t a =p dm z thja (t) t 1 t 2 4. s ur face mounted d uty cycle = 0.5 single pulse 0.02 0.05 10 -3 10 -2 01 1 10 -1 10 -4 0.2 0.1 dut y cycle = 0.5 sq uare wave puls e duration (s) normalized effective tran sient thermal impedance 1 0.1 0.01 0.05 single pulse 0.02 dt . www.daysemi.jp
document number: 71 192 11-s ep-06 www.daysemi.jp 1 dim millimeters inch es min max min max a 1.35 1.7 5 0.053 0.069 a 1 0.10 0.2 0 0.00 4 0.008 b 0.35 0.51 0.014 0.020 c 0.19 0.25 0.0075 0.010 d 4.80 5.00 0.189 0.196 e 3.80 4.00 0.150 0.157 e 1.27 bsc 0.050 bsc h 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 l 0.50 0.93 0.020 0.037 q0 8 0 8 s 0.44 0.64 0.018 0.026 ecn: c-06527-rev. i, 11-sep-06 dwg: 5498 4 3 1 2 5 6 8 7 h e h x 45 c all lea d s q 0.101 mm 0.004" l ba 1 a e d 0.25 mm (ga ge pla ne) s oic (narrow): 8-lead jedec p a rt n u m b er: ms -012 s package information
www .daysemi.jp document number: 72606 1 revision: 21-jan-08 application note recommen ded minimum pads for so-8 0.246 (6.248) recommended mi nimum pads dimensions in inches/(mm) 0.172 (4.369) 0.152 (3.861) 0.047 (1.194) 0.028 (0.71 1) 0.050 (1.270) 0.022 (0.559) return to index r e turn to index application note
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